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參數(shù)資料
| 型號： | 2SD2138AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 515K |
| 代理商： | 2SD2138AP |
Power Transistors
Publication date : October 2008
SJD00248CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2138A
Silicon NPN triple diffusion planar type darlington
For power amplication
Complementary to 2SB1418A
Features
High forward current transfer ratio hFE which has satisfactory linearity.
Allowing supply with the radial taping
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
2
A
Peak collector current
ICP
4
A
Collector power dissipation
PC
15
W
TC = 25°C
2.0
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 30 mA, IB = 0
80
V
Base-emitter voltage
VBE
VCE = 4 V, IC = 2 A
2.8
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 80 V, IE = 0
100
m
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V, IB = 0
100
m
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
m
A
Forward current transfer ratio
hFE1
VCE = 4 V, IC = 1 A
1000
hFE2 *
VCE = 4 V, IC = 2 A
2000
10000
Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 8 mA
2.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = –8 mA,
VCC = 50 V
0.4
m
s
Turn-off time
toff
4
m
s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank
Q
P
hFE2
2000 to 5000
4000 to 10000
Package
Code
MT-4-A1
Pin Name
1. Base
2. Collector
3. Emitter
Internal Connection
B
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2138APA | 功能描述:TRANS NPN 80VCEO 2A MT-4 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2138AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD2138AQA | 功能描述:TRANS NPN LF 80VCEO 2A MT-4 RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2138AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 2A I(C) | TO-221VAR |
| 2SD2138P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR |
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