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參數(shù)資料
| 型號(hào)： | 2SD2122S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | 2SD2122S |
2SD2122(L)/(S), 2SD2123(L)/(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
180
180
V
Collector to emitter voltage
120
160
V
Emitter to base voltage
5
5
V
Collector current
1.5
1.5
A
Collector peak current
3
3
A
Collector power dissipation
18
18
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SD2122(L)/(S)
2SD2123(L)/(S)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
—
180
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
—
160
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
—
—
10
—
—
10
μ
A
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 150 mA*
1
V
CE
= 5 V, I
C
= 500 mA*
1
I
C
= 500 mA,
I
B
= 50 mA*
1
V
CE
= 5 V, I
C
= 150 mA*
1
V
CE
= 5 V, I
C
= 150 mA*
1
V
= 10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE1
*
2
60
—
200
60
—
200
A
h
FE2
V
CE(sat)
30
—
—
30
—
—
Collector to emitter
saturation voltage
—
—
1
—
—
1
V
Base to emitter voltage
V
BE
—
—
1.5
—
—
1.5
V
Gain bandwidth product f
T
Collector output
capacitance
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h
FE1
as follows.
—
180
—
—
180
—
MHz
Cob
—
14
—
—
14
—
pF
B
C
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2123 | Silicon NPN Epitaxial |
| 2SD2123L | Silicon NPN Epitaxial |
| 2SD2123S | Silicon NPN Epitaxial |
| 2SD2124 | Silicon NPN Epitaxial |
| 2SD2124L | Silicon NPN Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2123 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD2123(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA |
| 2SD2123(L)-(1)B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD2123(L)-(1)C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD2123(L)B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA |
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