參數(shù)資料
型號: 2SD2115S
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial Planar(Low frequency power amplifier)
中文描述: 硅瑞展(低頻功率放大器)
文件頁數(shù): 3/5頁
文件大?。?/td> 31K
代理商: 2SD2115S
2SD2115(L)/(S)
3
T
C
= 25
°
C
I
B
= 0
1.0
0.8
0.6
0.4
0.2
0
C
C
2
Collector to emitter voltage V
CE
(V)
6
4
10
8
Typical Output Characteristics
4.5
4
0.5 mA
1
1.5
2
2.5
3.5
3
5
1,000
300
30
100
10
0.03
0.1
Collector current I
C
(A)
D
F
0.3
1.0
3.0
V
= 5 V
Ta = 25
°
C
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Base Current
10
3.0
1.0
C
C
0.3
0.1
2
10
30
100
200
Base current I
B
(mA)
Ta = 25
°
C
I
C
= 2 A
1.5 A
1 A
Saturation Voltage
vs. Collector Current
10
3
1.0
C
C
B
B
0.3
0.1
0.03
0.01
0.03
0.1
Collector current I
C
(A)
1.0
0.3
3.0
V
BE(sat)
V
CE(sat)
I
= 20 I
B
Ta = 25
°
C
相關PDF資料
PDF描述
2SD2115 Power Bipolar Transistors
2SD2116 General Driver Applications
2SD2117 General Driver Applications
2SD2120 General Driver Applications
2SD2121 Silicon NPN Epitaxial
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