參數(shù)資料
型號(hào): 2SD2115L
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial Planar(Low frequency power amplifier)
中文描述: 硅瑞展(低頻功率放大器)
文件頁數(shù): 2/5頁
文件大小: 31K
代理商: 2SD2115L
2SD2115(L)/(S)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
10
μ
A
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 1.5 A*
1
I
C
= 1.5 A, I
B
= 0.05 A*
1
DC current transfer ratio
150
Collector to emitter saturation
voltage
0.8
V
Base to emitter saturation
voltage
V
BE(sat)
1.3
V
I
C
= 1.5 A, I
B
= 0.05 A*
1
Fall time
Note:
t
f
0.6
μ
s
I
C
= 1.5 A, I
B1
= –I
B2
= 50 mA
1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
3.0
0.3
1.0
C
C
0.1
0.03
1
10
3
30
100
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C,
1 shot pulse
i
C(peak)
I
C(max)
P 0m
1m
Area of Safe Operation
D paoT
C
2
°
C
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