- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33435 > 2SD2114KT146/V 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2114KT146/V |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | 2SD2114KT146/V |
2SD2114K / 2SD2144S
Transistors
Rev.B
2/4
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
Min.
25
20
12
0.18
350
8.0
0.5
0.4
V
IC
=10A
IC
=1mA
IE
=10A
VCB
=20V
VEB
=10V
IC/IB
=500mA/20mA
VCE
=10V, IE= 50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
V
A
hFE
820
2700
VCE
=3V, IC=10mA
V
MHz
pF
Ron
0.8
IB
=1mA, Vi=100mV(rms), f=1kHz
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
Packaging specifications and hFE
Package
Code
T146
TP
3000
5000
Taping
Basic ordering
unit (pieces)
VW
hFE
VW
2SD2114K
2SD2144S
Type
hFE values are classified as follows :
Item
hFE
V
820 to 1800
W
1200 to 2700
Electrical characteristic curves
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
Ta
=25°C
0.2
A
0.4
A
0.6
A
0.8
A
1.0
A
1.2
A
1.4
A
1.6
A
IB
=0
1.8
A
2.0
A
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Grounded emitter output
characteristics ( )
0
200
400
600
800
1000
02468
10
Ta
=25
°C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
IB
=0mA
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics (
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
5
10
20
50
100
200
500
1000
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.3 Grounded emitter propagation
characteristics
VCE
=3V
Measured using
pulse current.
25
°C
25°C
Ta
=100°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2144STP/V | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2115(L) | POWER TRANSISTOR |
| 2SD2115S | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2117 | 1500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2118F5TLQS | 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2114KT146W | 功能描述:兩極晶體管 - BJT NPN 20V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2114KU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SC-59 |
| 2SD2114KV | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114KW | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2115 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial Planar |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。