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參數(shù)資料
| 型號(hào)： | 2SD2113 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | 硅npn型三重?cái)U(kuò)散（三倍擴(kuò)散npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 36K |
| 代理商： | 2SD2113 |
2SD2113
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
120
V
Collector to emitter voltage
120
V
Emitter to base voltage
7
V
Collector current
3
A
Collector peak current
6
A
Collector power dissipation
2
W
1
25
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
—
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C
= 25 mA, R
BE
= _
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
—
—
10
μA
V
CB
= 100 V, I
E
= 0
V
CE
= 100 V, R
BE
= _
V
CE
= 3 V, I
C
= 1.5 A*
I
C
= 1.5 A, I
B
= 3 mA*
I
C
= 3 A, I
B
= 30 mA*
I
C
= 1.5 A, I
B
= 3 mA*
I
C
= 3 A, I
B
= 30 mA*
—
—
10
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
—
—
1.5
V
1
voltage
—
—
3.0
1
Base to emitter saturation
—
—
2.0
V
1
voltage
Note:
—
—
3.5
1
1. Pulse test.
See switching characteristic curve of 2SD864(K).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2114 | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD2114_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD2114K | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114K_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain Medium Power Transistor (20V, 0.5A) |
| 2SD2114K_12 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-current Gain Medium Power Transistor |
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