參數(shù)資料
型號(hào): 2SD2110
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
中文描述: 硅npn型三重?cái)U(kuò)散(三倍擴(kuò)散npn型晶體管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 34K
代理商: 2SD2110
2SD2110
3
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
20
10
5
2
0.2
0.5
1.0
C
C
0.1
0.05
0.02
3
30
10
100
300
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
I
C(max)
1
μ
s
1m
10
μ
s
Area of Safe Operation
DCOeao(
C
5
°
C
T
C
= 25
°
C
I
B
= 0
5
4
3
2
1
0
1
C
C
2
Collector to emitter voltage V
CE
(V)
3
5
4
Typical Output Characteristics
0.4 mA
0.5
0.6
0.7
1.0
10,000
3,000
300
1,000
100
0.1
0.3
Collector current I
C
(A)
D
F
1.0
3
10
T
C
=75
°
C
–25
°
C
25
°
C
V
CE
= 3 V
DC Current Transfer Ratio vs.
Collector Current
相關(guān)PDF資料
PDF描述
2SD2111 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD2112 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD2113 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD2115 Silicon NPN Epitaxial Planar(Low frequency power amplifier)
2SD2115L Silicon NPN Epitaxial Planar(Low frequency power amplifier)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2111 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
2SD2112 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
2SD2113 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
2SD2114 制造商:HTSEMI 制造商全稱(chēng):Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN)
2SD2114_11 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor