參數(shù)資料
型號(hào)： 2SD2082
廠商： SANKEN ELECTRIC CO LTD
元件分類(lèi)： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
中文描述： 16 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝： FM100, TO-3PF, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 26K
代理商： 2SD2082
145
Darlington
2S D2082
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
10
20
26
2
4
6
1
Collector-Emitter Voltage V
CE
(V)
3
5
C
C
(
3mA
6mA
1.5mA
12mA
4m
2mA
I
B
=1mA
Safe Operating Area
(Single Pulse)
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
4A
8A
I
C
=16A
0.2
1
0.5
10
16
5
5000
30000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
Typ
1ms
10ms
10
50
5
3
100
200
0.03
0.05
0.1
1
0.5
10
50
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
0.1
1
5
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
100
μ
s
0
16
12
8
4
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
2CCeep
–(a m
h
FE
–I
C
Temperature
Characteristics
(Typical)
0.02
1
10
5
16
5000
20000
10000
D
F
1000
500
100
Collector Current I
C
(A)
(V
CE
=4V)
125C
–30C
25C
0.5
f
T
–I
E
Characteristics
(Typical)
0
–0.5
–1
–5
–10 –16
20
10
30
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
80
60
40
20
3.5
00
50
25
75
125
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
Typ
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1382)
Application :
Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2082
120
120
6
16(
Pulse
26)
1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2082
10
max
10
max
120
min
2000
min
1.5
max
2.5
max
20
typ
210
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=16mA
I
C
=8A, I
B
=16mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
5
I
C
(A)
8
V
(V)
–5
I
(mA)
–16
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
7.0typ
t
f
(
μ
s)
1.5typ
I
(mA)
16
V
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2k
)(100
)
Equivalent
circuit
相關(guān)PDF資料
PDF描述
2SD2083 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
2SD2091 TRANSISTOR NPN DARLINGTON
2SD2102 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD2103 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
2SD2104 Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2082_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2083 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 25A 3-Pin (3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 25A 3-Pin (3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN GEN PURP MT-100 TO-3P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD2083_01 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor
2SD2088 制造商:JVC Worldwide 功能描述:SUB ONLY SI.TRANSISTOR SUBBING WITH 2SD2088-T
2SD2088(F) 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 60V 2A 3-Pin LSTM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*