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參數(shù)資料
| 型號： | 2SD2079 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10R1A, SC-67, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 145K |
| 代理商： | 2SD2079 |
2SC5195
3
050
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Total
Power
Dissipation
P
T(mW)
100
150
50
100
150
0
0.5
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 1 V
Collector
Current
I
C
(mA)
1
0.01
0.1
1
10
100
0.1
1
0.2
2
20
50
5
0.5
Collector Current IC (mA)
DC
Current
Gain
h
FE
10
100
0
200
VCE = 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
2.5
5
7
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector
Current
I
C
(mA)
10
20
30
5
15
25
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
0
1
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
Gain
Bandwidth
Product
f
T(GHz)
7
23
5
10
20
5
10
0
1
Collector Current IC (mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
Insertion
Power
Gain
|S
21e
|2
(dB)
7
23
5
10
20
5
10
TYPICAL CHARACTERISTICS (TA = 25
°C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2079(Q) | 制造商:Toshiba 功能描述:NPN 100V 5A 2000 to 15000 TO220NIS Bulk |
| 2SD2079_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Switching Applications |
| 2SD2081 | 制造商:Sanken Electric Co Ltd 功能描述:NPN 制造商:Sanken Electric Co Ltd 功能描述:NPN Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington NPN 120V 10A 3-Pin (3+Tab) TO-220F Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 120V 10A TO220F |
| 2SD2081_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SD2082 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 120V 16A TO3PF |
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