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參數(shù)資料
| 型號： | 2SD2030 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 30K |
| 代理商： | 2SD2030 |
2SD2030, 2SD2031
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SD2030
2SD2031
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
160
200
V
Collector to emitter voltage
160
200
V
Emitter to base voltage
5
5
V
Collector current
100
100
mA
Collector power dissipation
400
400
mW
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
2SD2030 V
(BR)CBO
160
—
—
V
I
C
= 10
μ
A, I
E
= 0
2SD2031
200
Collector to emitter
breakdown voltage
2SD2030 V
(BR)CEO
160
—
—
V
I
C
= 1 mA, R
BE
=
∞
2SD2031
200
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff
current
2SD2030 I
CBO
—
—
10
μ
A
V
CB
= 140 V, I
E
= 0
2SD2031
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 1 mA
V
CE
= 5 V, I
C
= 10 mA
I
C
= 30 mA, I
B
= 3 mA
DC current transfer ratio
h
FE1
*
1
h
FE2
V
BE
V
CE(sat)
60
—
200
30
—
—
Base to emitter voltage
—
—
1.5
V
Collector to emitter saturation
voltage
—
—
0.5
V
Gain bandwidth product
f
T
C
ob
—
140
—
MHz
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SD2030 and 2SD2031 are grouped by h
FE1
as follows.
Grade
B
C
—
3.8
—
pF
h
FE1
60 to 120
100 to 200
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2030B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2030C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2031 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2031B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 100MA I(C) | TO-92 |
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