參數(shù)資料
型號: 2SD2029S
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 12 A, 160 V, NPN, Si, POWER TRANSISTOR
封裝: TOP-3L-A1, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 211K
代理商: 2SD2029S
2SD2029
2
SJD00240BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Cob VCB
Safe operation area
0
160
40
120
80
50
150
100
200
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)Without heat sink
(PC=3.5W)
(1)
(3)
(2)
012
210
48
6
0
4
8
12
20
16
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
TC=25C
IB=800mA
700mA
600mA
500mA
400mA
300mA
200mA
100mA
50mA
02.4
0.4
2.0
0.8
1.6
1.2
0
4
8
12
20
16
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
TC=–25C
25C
100C
VCE=5V
0.001
0.1
0.01
0.1
1
10
1
10
100
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=10
TC=100C
–25C
25C
0.1
1
10
100
1
10
102
103
104
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=5V
TC=100C
TC=25C
TC=–25C
0.01
0.1
1
10
0.1
1
10
100
1 000
Collector current I
C (A)
Transition
frequency
f
T
(MHz)
VCE=5V
f=1MHz
TC=25C
1
10
100
10
104
103
102
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1 000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
ICP
IC
t=10ms
t=100ms
DC
Non repetitive pulse
TC=25C
相關(guān)PDF資料
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2SD2029P 12 A, 160 V, NPN, Si, POWER TRANSISTOR
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