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參數資料
| 型號： | 2SD1980 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor(功率晶體管) |
| 中文描述： | 功率晶體管（功率晶體管） |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SD1980 |
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
!
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316 / 2SB1567.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
100
6
2
3
2
1
10
1
2
20
150
55
～ +
150
Unit
V
V
V
A(DC)
A(Pulse)
W
2
3
1
W
W(Tc
=
25
°
C)
2SD2195
2SD1980
2SD1867
2SD2398
W(Tc
=
25
°
C)
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
3
Printed circuit board, 1.7mm thick, collector plating 100mm
2
or larger.
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
2SD2195
MPT3
1k
～
10k
DP
T100
1000
2SD1980
CPT3
1k
～
10k
TL
2500
2SD1867
ATV
1k
～
10k
TV2
2500
2SD2398
TO-220FN
1k
～
10k
500
Denotes h
FE
Code
Basic ordering unit (pieces)
!
Circuit schematic
R
1
3.5k
R
2
300
B
C
E : Emitter
C
B
E
: Base
: Collector
R
1
R
2
!
External dimensions
(Units : mm)
2SD2195
(3) Emitter(Source)
(2) Collector(Drain)
EIAJ : SC-62
2SD1980
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5
ROHM : TO-220FN
2SD2398
(2) Collector(Drain)
(1) Base(Gate)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
1
0
1
0
1
0
3
0
1
(3)
4
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
2SD1867
(3) Base
(2) Collector
(1) Emitter
ROHM : ATV
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
Taping specifications
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
100
100
1000
Typ.
Max.
10
3
1.5
10000
Unit
V
V
μ
A
mA
V
Conditions
Cob
25
pF
I
C
=
50
μ
A
I
C
=
5mA
V
CB
=
100V
V
EB
=
5V
I
C
=
1A , I
B
=
1mA
V
CE
=
2V , I
C
=
1A
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Output capacitance
Measured using pulse current.
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| 2SD1980TL | 功能描述:達林頓晶體管 D-PAK;BCE NPN;DARL SMT RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD1980TLR | 制造商:Rohm 功能描述:NPN_[g 100V 2A 1000`10000 DPak, SC63,TO252 Cut Tape |
| 2SD1981-AE | 制造商:SANYO 功能描述:NPN 80V 2A 1000 MP Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 100V 80A TO-226 制造商:Sanyo 功能描述:0 |
| 2SD1984 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92MOD 30V 1A .9W ECB |
| 2SD1987 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP 60V 4A 30W BCE |
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