參數(shù)資料
型號: 2SD1908
廠商: Sanyo Electric Co.,Ltd.
英文描述: CRT Display Horizontal Deflection Output Applications
中文描述: CRT顯示器水平偏轉(zhuǎn)輸出應(yīng)用
文件頁數(shù): 1/3頁
文件大?。?/td> 116K
代理商: 2SD1908
2SD1908
Ordering number : EN3971
CRT Display Horizontal Deflection Output
Applications
NPN Epitaxial Planar Silicon Transistor
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-0537 No.3971-1/3
Package Dimensions
unit: mm
2049B-TO-220MF
[2SD1908]
E : Emitter
C : Collector
B : Base
SANYO : TO-220MF
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Conditions
Ratings
Unit
V
V
V
A
A
A
W
W
°C
°C
330
150
6
7
12
4
1.65
50
150
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
100
100
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
tf
VCB=200V, IE=0
VEB=5V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=5A
VCE=10V, IC=0.5A
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=1mA, IE=0
IC=1mA, RBE=
IE=1mA, IC=0
IC=5A, IB1=–IB2=0.5A
μA
mA
15
10
10
50
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Fall Time
40
MHz
V
V
V
V
V
μs
1
1.2
330
150
6
0.5
Features
Fast switching speed.
Especially suited for use in high-definition CRT display :
VCC=6 to 12V.
Wide ASO and highly resistant to breakdown.
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