參數(shù)資料
型號(hào): 2SD1878
廠商: 永盛國(guó)際集團(tuán)
英文描述: SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
中文描述: 擴(kuò)散硅功率晶體管(一般)的說(shuō)明
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 86K
代理商: 2SD1878
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency,primarily
for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
MAX
1500
600
5
10
60
5
-
2.0
1.0
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 4.0A; I
B
= 1.2A
f = 16KHz
I
F
= 4.0A
I
C
=4A,I
B1
=-I
B2
=1.2A,V
CC
=140V
25
s
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
-
-55
-
MAX
1500
600
5
10
2
3
60
150
150
UNIT
V
V
A
A
A
A
W
Tmb
25
SYMBOL
I
CE
I
CES
PARAMETER
Collector cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 4.0A; I
B
= 1.2A
I
C
= 4.0A; I
B
= 1.2A
I
C
= 1A; V
CE
= 5V
I
F
= 4.0A
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=4A,I
B1
=-I
B2
=1.2A,V
CC
=100V
I
C
=4A,I
B1
=-I
B2
=1.2A,V
CC
=100V
MIN
-
-
MAX
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
-
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
-
-
8
5
V
V
1.5
30
2.0
-
125
4.5
1.0
V
3
MHz
pF
s
s
ELECTRICAL CHARACTERISTICS
TO-3PML
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
SILICON DIFFUSED POWER TRANSISTOR
2SD1878
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