- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄246845 > 2SD1857TV2 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1857TV2 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | 2SD1857TV2 |
2SD1857
Data Sheet
2/2
www.rohm.com
○
c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.E
Electrical characteristics curves
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Ground emitter output characteristics
0
0.2
0.4
0.6
0.8
1.0
1
2
3
4
5
0
Ta
=25°C
IB
=0mA
1mA
2mA
3mA
5mA
6mA
7mA
8mA
9mA
10mA
4mA
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.2 Ground emitter propagation characteristics
0
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ta
=
100
°C
25
°C
25
°C
VCE
=5V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.3 DC current gain vs. collector current ( )
1
2
5
10
20
50
100
200
500
1000
0.01 0.02
0.05
0.1 0.2
0.5
12
5
10
Ta
=25°C
5V
VCE
=10V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Fig.4 DC current gain vs. collector current (
)
1
2
5
10
20
50
100
200
500
1000
0.01 0.02
0.05
0.1 0.2
0.5
12
5
10
Ta
=100°C
25
°C
25°C
VCE
=5V
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta
=25°C
IC/IB
=5V
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
Fig.6 Collector-emitter saturation
Base-emitter saturation vs. collector current
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
25
10
Ta
=100°C
Ta
= 25°C
25°C
25
°C
25
°C
100
°C
VCE(sat)
VBE(sat)
IC/IB
=10
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE
(mA)
Fig.7 Gain bandwidth product vs. emitter current
1
2
5
10
20
50
100
200
500
1000
1 2
5 10 20
50 100 200
500 1000
VCE
=5V
Ta
=25°C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig.8 Collector output capacitance
vs. collector-base voltage
1
2
5
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10 20
50 100
Ta
=25°C
f=1MHz
IE
=0A
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
COLLECTOR
CURRENT
:
I
C
(A)
0.2
0.1
0.5 12
5 10 20
50 100
500 1000
200
5
0.5
2
0.2
1
0.1
0.02
0.01
0.005
0.002
0.001
0.05
10
Fig.9 Safe operating area
DC
Ta
=25°C
Single
nonrepetitive
pulse
Pw
=
10ms
100ms
IC Max(PULSE
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2152T91/S | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2152T92/S | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5355/D74Z-J61Z | PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3450L-RA | 10 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 2SB624R4BV | 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1857TV2P | 功能描述:兩極晶體管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1857TV2Q | 功能描述:兩極晶體管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1857TV2R | 功能描述:兩極晶體管 - BJT DVR NPN 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1858 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB P-2SD1858R |
| 2SD1858R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。