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參數(shù)資料
| 型號： | 2SD1841P |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SD1841P |
2SD1841
No.3260-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=100V, IE=0A
0.1
mA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
0.1
mA
DC Current Gain
hFE1VCE=2V, IC=2.5A
50*
140*
hFE2VCE=2V, IC=10A
20
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=10A, IB=1A
0.8
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=10A, IB=1A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
110
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
6
V
* : The 2SD1841 is classified by 2.5A hFE as follows :
Rank
P
Q
hFE
50 to 100
70 to 140
Package Dimensions
unit : mm (typ)
7503-003
14.0
15.6
4.8
2.0
20.0
3.5
2.6
1.2
1.3
15.0
3.2
1.4
1.6
1.0
0.6
5.45
12 3
0.6
2.0
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
ITR09394
02
13
4
5
0
8
4
12
20
24
28
16
IB=0A
5.0A 3.0A
0.5A
0.3A
0.2A
0.1A
2.0A
1.0A
IC -- VBE(ON)
Base-to-Emitter ON Voltage, VBE(ON) -- V
Collector
Current,
I
C
-
A
ITR09396
1.2
0.4
0
0.8
1.6
2.0
2.4
2.8
0
12
8
4
16
20
24
28
T
a=
--40
°C
25
°C
120
°C
VCE=2V
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