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參數(shù)資料
| 型號(hào)： | 2SD1804G-T-TM3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 198K |
| 代理商： | 2SD1804G-T-TM3-T |
2SD1804
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
5 of 5
www.unisonic.com.tw
QW-R209-006,D
TYPICAL CHARACTERISTICS(Cont.)
57
7
5
3
2
100
Co
llector
to
Emi
tter
Satu
ra
tion
Vo
ltag
e,
V
CE(
S
AT)
-m
V
0.1
0.01
7
5
3
2
1.0
3
2
10
7
2
3
5
7
1000
Ta=-25℃
Ta=75℃
5
3
5
2
57
7
5
3
2
1.0
0.1
0.01
7
5
3
2
1.0
5
3
2
5
7
2
3
5
7
10
Ta=75℃
Ta=25℃
Ta=-25℃
Base
to
Emi
tter
Sa
tu
ra
tion
Vo
ltag
e,
V
BE(
SAT
)-V
3
710
IC/IB=20
7 10
2
Ic/IB=20
Ta=25℃
Collector Current, IC (A)
VCE(SAT) -IC
Collector Current, IC (A)
VBE(SAT) -IC
60
40
20
0
80
140
120
100
160
16
20
24
No heat sink
PD -Ta
4
8
12
0
C
ollector
Dissipation,
P
C
-W
7
5
3
2
10
1.0
7
5
3
2
100
0.1
2
3
5
2
3
5
0.01
Colle
ct
or
Cur
rent,
I
C
-A
7
5
3
1.0
10
2
3
5
100ms
DC
Oper
atio
n
T
C
=25
℃
DC
Op
er
at
ion
Icp
IC
1
2
0.1
7
2
TC=25℃, One Pulse For
PNP,minus sign is omitted.
10ms
1ms
Colletcor to Emitter Voltage, VCE (V)
A S O
Ambient Temperature, Ta (℃)
Ta=
25
℃
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
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| 2SD1804G-R-TM3-T | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 2SD1804G-T-TN3-R | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 2SD1804G-Q-TM3-T | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 2SD1804G-Q-TN3-R | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 2SD1804G-S-TN3-R | 8000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
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| 2SD1805G-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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