參數(shù)資料
型號: 2SD1775A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
中文描述: 2 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: N-TYPE PACKAGE-3
文件頁數(shù): 2/3頁
文件大小: 57K
代理商: 2SD1775A
2
Power Transistors
2SD1775, 2SD1775A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
I
B
=3mA
T
C
=25C
2mA
1mA
0.8mA
0.6mA
0.4mA
0.2mA
0.1mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=40
T
C
=100C
25C
–25C
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=40
25C
100C
T
C
=–25C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
T
C
=100C
25C
–25C
V
CE
=4V
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
=12V
f=10MHz
T
C
=25C
T
T
0
2.5
2.0
0.5
1.5
1.0
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=40 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
1ms
300ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
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