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參數(shù)資料
| 型號(hào)： | 2SD1773 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For midium speed switching) |
| 中文描述： | 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SD1773 |
1
Power Transistors
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
7
12
8
50
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 100V, I
B
= 0
I
C
= 2A, L = 10mH
I
E
= 50mA, I
C
= 0
V
CE
= 3V, I
C
= 4A
I
C
= 4A, I
B
= 8mA
I
C
= 8A, I
B
= 80mA
I
C
= 4A, I
B
= 8mA
I
C
= 8A, I
B
= 80mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= –8mA,
V
CC
= 50V
min
120
7
1000
typ
20
0.7
6
2
max
100
10
20000
1.5
3
2
3.5
Unit
μ
A
μ
A
V
V
V
V
V
V
MHz
μ
s
μ
s
μ
s
T
C
=25
°
C
Ta=25
°
C
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Unit: mm
Internal Connection
B
C
E
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