1
Power Transistors
2SD1743, 2SD1743A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1173 and 2SB1173A
s Features
q
High forward current transfer ratio hFE which has satisfactory linearity
q
Low collector to emitter saturation voltage VCE(sat)
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
80
60
80
5
8
4
15
1.3
150
–55 to +150
Unit
V
A
W
C
2SD1743
2SD1743A
2SD1743
2SD1743A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
min
60
80
70
15
typ
25
0.4
1.2
0.5
max
400
700
1
250
2
1.5
Unit
A
mA
V
MHz
s
2SD1743
2SD1743A
2SD1743
2SD1743A
2SD1743
2SD1743A
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
±0.3
7.0
±0.3
3.0
±0.2
3.5
±0.2
10.0
+0.3
–0.
0.8
±0.2
1.0
±0.2
4.6
±0.4
2
13
1.1
±0.1
0.75
±0.1
2.3
±0.2
0.85
±0.1
0.4
±0.1
7.0
±0.3
0.75
±0.1
2.3
±0.2
4.6
±0.4
1.1
±0.1
10.2
±0.3
7.2
±0.3
2.0
±0.2
0.9
±0.1
3.5
±0.2
2.5
±0.2
1.0
2.5
±0.2
3.0
±0.2
1.0
max.
123
0 to 0.15
2.5
0.5 max.