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參數(shù)資料
| 型號(hào)： | 2SD1719 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 6 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | 2SD1719 |
Power Transistors
2SD1719
Silicon NPN triple diffusion planar type
1
Publication date: April 2003
SJD00212AED
For power amplification with high forward current transfer
ratio
■
Features
High forward current transfer ratio h
FE
which has satisfactory lin-
earity
High emitter-base voltage (Collector open) V
EBO
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
100
60
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
15
V
Collector current
6
A
Peak collector current
I
CP
12
3
A
Base current
I
B
P
C
A
Collector power dissipation
40
W
T
a
=
25
°
C
1.3
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
25 mA, I
B
=
0
V
CB
=
10
0 V, I
E
=
0
V
EB
=
15 V, I
C
=
0
V
CE
=
4
V, I
C
=
1 A
I
C
=
5
A, I
B
=
0.1
A
V
CE
=
12 V, I
C
=
0.5 A, f
=
10 MHz
60
V
Collector-base cutoff current (Emitter open)
I
CBO
I
EBO
100
100
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
h
FE
300
2
000
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.5
V
Transition frequency
30
MHz
Turn-on time
t
on
I
C
=
5
A
I
B1
=
0.1
A, I
B2
=
0.1 A
V
CC
=
50 V
0.3
μ
s
μ
s
μ
s
Strage time
t
stg
t
f
1.5
Fall time
0.6
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
8.5
±
0.2
3.4
±
0.3
1.0
±
0.1
0 to 0.4
6.0
±
0.2
0.8
±
0.1
R = 0.5
R = 0.5
1.0
±
0.1
0.4
±
0.1
(8.5)
(6.0)
(6.5)
1.3
(
(
2.54
±
0.3
1.4
±
0.1
5.08
±
0.5
1
2
3
1
±
0
2
±
0
1
±
0
1
+
–
3
+
–
4
±
0
4
±
1
±
0
Rank
Q
P
h
FE
300 to 1200
800 to 2
000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
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