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參數(shù)資料
| 型號(hào)： | 2SD1609 |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 84K |
| 代理商： | 2SD1609 |
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
3
QW-R204-008,A
0.1
1
10
100
1000
10
Collector Current (mA)
Current Gain & Collector Current
hF
E
1
10
Reverse Biased Voltage(V)
Capacitance& Reverse-Biased Voltage
C
ap
ac
ita
n
ce
(p
F
)
10
100
1000
100
110
1000
Collector Current(mA)
Saturation Voltage &Collector Current
S
atur
atio
nV
ol
ta
ge
(m
V
)
VCE =5V
100
VCE(sat) @Ic=10IB
0.1
1
10
100
1000
10000
100
Collector Current (mA)
On Voltage & Collector Current
O
nVo
lta
ge
(m
V)
10
1000
100
110
1000
Collector Current(mA)
Cutoff Frequency &Collector Current
C
utoff
Fr
eq
ue
nc
y(
M
H
z)
100
VBE(on) @VcE=5V
VCE =5V
1
10
100
1000
Cob
0.1
10
1000
100
110
1000
Forward Voltage (V)
Safe Operating Area
C
ol
le
ct
or
C
urre
nt
(m
A)
100
10000
PT =1ms
PT =100ms
PT =1s
1
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| 2SD1614-T1XK | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1614-T2XM | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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