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參數(shù)資料
| 型號(hào)： | 2SD1606 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | 2SD1606 |
2SD1606
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
6A
Collector peak current
I
C(peak)
12
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
I
D*
1
6A
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
VI
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
100
AV
CB = 120 V, IE = 0
I
CEO
——
10
AV
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 3 A*
1
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
CE(sat)2
—
3.0
V
I
C = 6 A, IB = 60 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2.0
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
BE(sat)2
—
3.5
V
I
C = 6 A, IB = 60 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 6 A*
1
Turn on time
t
on
—
0.6
—
sI
C = 3 A, IB1 = –IB2 = 6 mA
Storage time
t
stg
—
7.0
—
s
Fall time
t
f
—
2.0
—
s
Note:
1. Pulse test.
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