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參數(shù)資料
| 型號： | 2SD1592K |
| 廠商： | NEC Corp. |
| 英文描述： | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 300V五（巴西）總裁| 5A條一（c）|的SOT - 186 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 2SD1592K |
Data Sheet D16137EJ1V0DS
2
2SD1592
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 400 V, I
E
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 2.0 A
400
3,000
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 3.0 A
100
Collector saturation voltage
V
CE(sat)
*
I
C
= 2 A, I
B
= 5 mA
1.0
1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
= 2 A, I
B
= 5 mA
1.6
2.0
V
Turn-on time
t
on
1.0
μ
s
Storage time
t
stg
12
μ
s
Fall time
t
f
I
C
= 3.0 A, I
B1
=
I
B2
= 30 mA
R
L
= 50
, V
CC
150 V
6
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE
400 to 800
600 to 1,200
1,000 to 3,000
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
T
T
Collector to Emitter Voltage V
CE
(V)
C
C
Case Temperature T
C
(
°
C)
I
C
Collector Current I
C
(A)
Case Temperature T
C
(
°
C)
D
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1592L | TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186 |
| 2SD1592M | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1592 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING |
| 2SD1592 | High Voltage, Low Speed Switching Industrial Use |
| 2SD1603 | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD16 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 6A 80W BEC |
| 2SD1601 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 4A 40W BCE |
| 2SD161 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC |
| 2SD1614-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 20V 2A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SD1614-T1-AZ(XK) | 制造商:Renesas Electronics 功能描述:NPN |
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