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參數(shù)資料
| 型號(hào)： | 2SD1588L |
| 廠商： | NEC Corp. |
| 英文描述： | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 7A條一（c）|至220VAR |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 102K |
| 代理商： | 2SD1588L |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D13174EJ1V1DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Large current capacity in small dimension: I
C(DC)
= 7 A
Low collector saturation voltage: V
CE(sat)
= 0.5 V MAX. (@5 A)
Ideal for use in ramp drivers or inductance drivers
Complementary transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
C
= 25
°
C)
P
T
(T
A
= 25
°
C)
T
j
T
stg
Ratings
100
60
7.0
7.0
15
3.5
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°
C
°
C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
* PW
≤
300
μ
s, duty cycle
≤
10%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
I
CBO
I
EBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
Conditions
MIN.
TYP.
MAX.
10
10
200
Unit
μ
A
μ
A
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
** Pulse test PW
≤
350
μ
s, duty cycle
≤
2%/per pulsed
V
CB
= 80 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 3 A
V
CE
= 1.0 V, I
C
= 5 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 5 A, I
B
= 0.5 A
40
20
0.5
1.5
V
V
h
FE
CLASSIFICATION
Marking
h
FE1
M
L
K
40 to 80
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1588M | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220VAR |
| 2SD1588 | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD1588 | Silicon NPN Transistors |
| 2SD1592K | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1592L | TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1588-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1589 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1592-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1592-AZ-K | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD16 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 6A 80W BEC |
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