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參數(shù)資料
| 型號： | 2SD1521 |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SD1521 |
2SD1521
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
(Zener breakdown voltage)
V
(BR)CBO
[V
Z]
50
60
70
V
I
C = 0.1 mA, IE = 0
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CEO
——
10
AV
CE = 50 V, RBE = ∞
DC current transfer ratio
h
FE
2000
—
30000
V
CE = 3 V, IC = 1 A*
1
Collector to emitter saturation
V
CE (sat)1
—
1.5
V
I
C = 1 A, IB = 1 mA*
1
voltage
V
CE (sat)2
—
2.0
V
I
C = 1.5 A, IB = 1.5 mA*
1
Base to emitter saturation
V
BE (sat)1
—
2.0
V
I
C = 1 A, IB = 1 mA*
1
voltage
V
BE (sat)2
—
2.5
V
I
C = 1.5 A, IB = 1.5 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 1.5 A
Turn on time
Ton
—
0.5
—
sI
C = 1 A, IB1 = –IB2 = 1 mA
Turn off time
Toff
—
2.0
—
s
Note:
1. Pulse test.
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
15
10
5
0.01
0.03
0.1
0.3
1.0
10
3
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
3
10
30
100
300
Area of Safe Operation
1
s
100
s
DC
(T
C =
25
°C)
PW
=
10
ms
1 ms
iC (peak)
IC (max)
Ta = 25
°C
1 shot pulse
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| 2SD1579-L | 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1525(F) | 功能描述:兩極晶體管 - BJT NPN VCEO 100V VCE 5V Ic 30A hFE 1000 min RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1526 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1527(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1531 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATS.TRANS. TO-126B 50V 2A 1.2W ECB |
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