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參數資料
| 型號： | 2SD1502 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
| 中文描述： | 硅npn型三重擴散（三倍擴散npn型晶體管） |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD1502 |
2SD1502
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
300
V
Collector to emitter voltage
300
V
Emitter to base voltage
7
V
Collector current
0.3
A
Collector peak current
0.6
A
Collector power dissipation
1.5
W
1
15
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE(sat)
—
—
10
μA
V
CB
= 300 V, I
E
= 0
V
CE
= 60 V, R
BE
=
∞
V
EB
= 5 V, I
C
= 0
V
CE
= 1.5 V, I
C
= 20 mA*
V
CE
= 1.5 V, I
C
= 100 mA*
I
C
= 100 mA, I
B
= 0.2 mA*
—
—
10
Emitter cutoff current
—
—
10
μA
DC current transfer ratio
1000
—
—
1
1500
—
—
1
Collector to emitter saturation
voltage
—
—
1.5
V
1
Base to emitter saturation
voltage
Note:
1. Pulse test.
V
BE(sat)
—
—
2.0
V
I
C
= 100 mA, I
B
= 0.2 mA*
1
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