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參數(shù)資料
| 型號： | 2SD1475O |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 171K |
| 代理商： | 2SD1475O |
1
Power Transistors
2SD1475
Silicon NPN triple diffusion planar type
For power switching
s Features
q
High-speed switching
q
Satisfactory linearity of foward current transfer ratio hFE
q
Large collector power dissipation PC
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
80
60
6
8
4
1
35
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
min
60
70
20
typ
50
0.35
1
0.3
max
100
320
1.2
1
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250
160 to 320
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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