參數(shù)資料
型號: 2SD1457Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 6 A, 150 V, NPN, Si, POWER TRANSISTOR
封裝: TOP-3, FULL PACK-3
文件頁數(shù): 1/3頁
文件大?。?/td> 182K
代理商: 2SD1457Q
1
Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
s Features
q
High foward current transfer ratio hFE
q
High collector to base voltage VCBO
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
200
150
200
5
10
6
60
3
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
VCEO(sus)
VEBO
hFE
*
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 200V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 0.5A, f = 1MHz
min
150
5
700
typ
15
max
100
10000
1.5
2.5
Unit
A
V
MHz
2SD1457
2SD1457A
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
*h
FE Rank classification
Rank
Q
P
O
hFE
700 to 2500 2000 to 5000 4000 to 10000
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±0.3
21.0
±0.5
16.2
±0.5
12.5
Solder
Dip
3.5
0.7
15.0
±0.2
5.0
±0.2
11.0
±0.2
10.9
±0.5
5.45
±0.3
3
2
1
1.1
±0.1
2.0
±0.2
0.6
±0.2
2.0
±0.1
φ3.2±0.1
3.2
B
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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