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參數(shù)資料
| 型號(hào)： | 2SD1395 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Triple Diffused Planar Silicon Darlington Transistor for Driver Application(驅(qū)動(dòng)器應(yīng)用的NPN三路硅平面擴(kuò)散型達(dá)林頓晶體管) |
| 中文描述： | npn型三重?cái)U(kuò)散平面硅達(dá)林頓晶體管（驅(qū)動(dòng)器應(yīng)用的npn型三路硅平面擴(kuò)散型達(dá)林頓晶體管的驅(qū)動(dòng)應(yīng)用） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | 2SD1395 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91096TS (KOTO) 8-5330/D251MH/5257KI/7223KI, MT No.1221–1/3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Ordering number:EN1221C
2SD1395
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SD1395]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ
: SC-46
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Large current capacity
· Wide ASO.
· On-chip Zener diode of 60
±
10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
process.
· High inductive load handling capability.
* : With Zener diode of (60
±
10V).
10.2
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Continued on next page.
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