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參數(shù)資料
| 型號： | 2SD1367 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 31K |
| 代理商： | 2SD1367 |
2SD1367
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
20
V
Collector to emitter voltage
16
V
Emitter to base voltage
6
V
Collector current
2
A
Collector peak current
3
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%.
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
16
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
0.1
μ
A
μ
A
V
CB
= 16 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1 A, Pulse
I
C
= 1 A, I
B
= 0.1 A, Pulse
Emitter cutoff current
—
0.1
DC current transfer ratio
100
—
500
Collector to emitter saturation
voltage
—
0.15
0.3
V
Base to emitter saturation
voltage
V
BE(sat)
—
0.9
1.2
V
I
C
= 1 A, I
B
= 0.1 A, Pulse
Gain bandwidth product
f
T
Cob
—
100
—
MHz
V
CE
= 2 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SD1367 is grouped by h
FE
as follows.
Mark
BA
—
20
—
pF
BB
BC
h
FE
100 to 200
160 to 320
250 to 500
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