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參數(shù)資料
| 型號(hào)： | 2SD1366AAC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 141K |
| 代理商： | 2SD1366AAC |
2SD1366A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
1A
Collector peak current
i
C(peak)*
1
1.5
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.1
AV
CB = 20 V, IE = 0
Emitter cutoff current
I
EBO
—
0.1
AV
EB = 4 V, IC = 0
DC current transfer ratio
h
FE*
1
85
—
240
V
CE = 2 V, IC = 0.5 A, Pulse
Collector to emitter saturation
voltage
V
CE(sat)
—
0.15
0.3
V
I
C = 0.8 A, IB = 0.08 A, Pulse
Base to emitter saturation
voltage
V
BE(sat)
—
0.9
1.0
V
I
C = 0.8 A, IB = 0.08 A, Pulse
Gain bandwidth product
f
T
—
240
—
MHz
V
CE = 2 V, IC = 0.5 A, Pulse
Collector output capacitance
Cob
—
22
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1366A is grouped by h
FE as follows.
Mark
AC
AD
h
FE
85 to 170
120 to 240
See characteristic curves of 2SD1366.
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