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參數(shù)資料
| 型號： | 2SD1350A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type |
| 中文描述： | 500 mA, 500 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SD1350A |
2
Transistor
2SD1350, 2SD1350A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
0
160
40
120
80
140
20
100
60
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.3mA
0.2mA
0.1mA
0.4mA
I
B
=1.0mA
Collector to emitter voltage V
CE
(V)
C
C
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
25C
–25C
Ta=75C
Collector current I
C
(mA)
C
C
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
Ta=–25C
25C
75C
Collector current I
C
(mA)
B
B
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
V
CE
=5V
Ta=75C
25C
–25C
Collector current I
C
(mA)
F
F
– 0.001
– 0.01
– 0.1
–1
– 0.003
Emitter current I
E
(A)
– 0.03
– 0.3
60
50
40
30
20
10
V
=30V
Ta=25C
T
T
10
Collector to base voltage V
CB
(V)
30
100
300
1000
0
30
25
20
15
10
5
I
=0
f=1MHz
Ta=25C
C
o
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