參數(shù)資料
型號(hào): 2SD1306
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/5頁
文件大?。?/td> 27K
代理商: 2SD1306
2SD1306
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
15
V
Emitter to base voltage
5
V
Collector current
0.7
A
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
1.0
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 1 V, I
C
= 150 mA*
2
V
CE
= 1 V, I
C
= 150 mA*
2
I
C
= 500 mA, I
B
= 50 mA*
2
DC current transfer ratio
250
800
Base to emitter voltage
1.0
V
Collector to emitter saturation
voltage
0.5
V
Gain bandwidth product
Notes: 1. The 2SD1306 is grouped by h
FE
as follows.
2. Pulse test
Grade
D
f
T
250
MHz
V
CE
= 1 V, I
C
= 150 mA*
2
E
Mark
ND
NE
h
FE
250 to 500
400 to 800
See characteristic curves of 2SD1504.
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