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參數(shù)資料
| 型號： | 2SD1277AQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 241K |
| 代理商： | 2SD1277AQ |
Power Transistors
1
Publication date: February 2003
SJD00191BED
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
Complementary to 2SB0951, 2SB0951A
■ Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1277
VCBO
60
V
(Emitter open)
2SD1277A
80
Collector-emitter voltage 2SD1277
VCEO
60
V
(Base open)
2SD1277A
80
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
8A
Peak collector current
ICP
12
A
Collector power
TC
= 25°CP
C
45
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1277
VCEO
IC = 30 mA, IB = 0
60V
(Base open)
2SD1277A
80
Collector-base cutoff
2SD1277
ICBO
VCB
= 60 V, I
E
= 0
100
A
current (Emitter open)
2SD1277A
VCB = 80 V, IE = 0
100
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 02
mA
Forward current transfer ratio
hFE1 *
VCE
= 3 V, I
C
= 4 A
1 000
10 000
hFE2
VCE = 3 V, IC = 8 A
500
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 8 mA
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC
= 4 A, I
B
= 8 mA
2.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = 8 mA,
0.5
s
Storage time
tstg
VCC
= 50 V
4.0
s
Fall time
tf
1.0
s
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
1 000 to 2 500
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1277AR | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1277Q | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1279 | 10 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2SD1280AQ | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1280R | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1277AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | SOT-186 |
| 2SD1277P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | SOT-186 |
| 2SD1277Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | SOT-186 |
| 2SD1277R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | SOT-186 |
| 2SD1279 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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