參數(shù)資料
型號: 2SD1266A
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type(For low-frequency power amplification)
中文描述: 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: SC-67, TO-220F-A1, FULL PACK-3
文件頁數(shù): 2/2頁
文件大?。?/td> 47K
代理商: 2SD1266A
2
Power Transistors
2SB941, 2SB941A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C
=25C
–80mA
–60mA
–40mA
–30mA
–20mA
–12mA
–8mA
–4mA
–16mA
I
B
=–100mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–10
–8
–6
–4
–2
T
C
=100C
25C
V
CE
=–4V
–25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
25C
–25C
T
C
=100C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
CE
=–4V
T
C
=100C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
3
10
30
100
300
1000
3000
10000
V
=–5V
f=10MHz
T
C
=25C
T
T
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
10ms
t=1ms
I
CP
I
C
2
2
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
Time t (s)
T
t
(
相關(guān)PDF資料
PDF描述
2SB942 Silicon PNP epitaxial planar type(For low-frequency power amplification)
2SB943 Silicon PNP epitaxial planar type(For power switching)
2SB944 Silicon PNP epitaxial planar type(For power switching)
2SB946 Silicon PNP epitaxial planar type(For power switching)
2SB947 Silicon PNP epitaxial planar type(For low-voltage switching)
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