- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371493 > 2SD1262A (PANASONIC CORP) Silicon PNP epitaxial planar type Darlington PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1262A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type Darlington |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 73K |
| 代理商： | 2SD1262A |
2
Power Transistors
2SB939, 2SB939A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
CE(sat)
— I
C
V
BE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
–5
–4
–1
–3
–2
0
–8
–6
–2
–5
–7
–4
–1
–3
–1.8mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
T
C
=25C
I
B
=–2.0mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=500
T
C
=100C
–25C
25C
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
/I
B
=1000
T
C
=25C
(1)
(2)
(3)
C
C
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C
/I
B
=500
T
C
=–25C
25C
100C
B
B
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
– 0.1
–100
–10
–1
– 0.3
–3
–30
(1)
(2)
(3)
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
/I
B
=1000
T
C
=25C
B
B
– 0.1
–1
–10
– 0.3
Collector current I
C
(A)
–3
10
2
10
5
10
4
10
3
V
CE
=–3V
T
C
=100C
25C
–25C
F
F
1
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
I
CP
I
C
300ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB939A | Silicon PNP epitaxial planar type Darlington |
| 2SB940 | Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1264A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SB940A | For Power Amplification |
| 2SB941 | Silicon PNP epitaxial planar type(For low-frequency power amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1262AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SD1262Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。