參數(shù)資料
型號: 2SD1258PQ
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 1 A, 150 V, NPN, Si, POWER TRANSISTOR
封裝: N-TYPE PACKAGE-3
文件頁數(shù): 2/2頁
文件大?。?/td> 48K
代理商: 2SD1258PQ
2
Power Transistors
2SD1258
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 50
× 50 × 2mm
Al heat sink
(3) Without heat sink
(P
C=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
0.5
0.4
0.3
0.2
0.1
T
C=25C
I
B=400A
350
A
300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=25
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=25
25C
–25C
T
C=100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
I
CP
I
C
t=10ms
1ms
300ms
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
103
102
(1) Without heat sink
(2) With a 50
× 50 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
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