參數(shù)資料
型號: 2SD1257
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planar type(For power switching)
中文描述: 7 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, N-G1, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 62K
代理商: 2SD1257
2
Power Transistors
2SD1257, 2SD1257A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
CE(sat)
— I
C
V
BE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=25C
I
B
=55mA
50mA
45mA
40mA
35mA
20mA
15mA
30mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
T
C
=100C
25C
–25C
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C
/I
B
=10
(2) I
/I
B
=20
T
C
=25C
(1)
(2)
C
C
0.1
30
10
1
0.3
Collector current I
C
(A)
3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C
/I
B
=10
(2) I
/I
B
=20
T
C
=25C
(1)
(2)
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
=10V
f=10MHz
T
C
=25C
T
T
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=2V
T
C
=100C
25C
–25C
F
F
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