參數(shù)資料
型號: 2SD1222(2-7B1A)
元件分類: 小信號晶體管
英文描述: 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 2-7B1A, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 183K
代理商: 2SD1222(2-7B1A)
2SD1222
2002-07-23
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1222
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)
Complementary to 2SB907.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.3
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 4.8 k
≈ 300
COLLECTOR
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