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參數(shù)資料
| 型號(hào)： | 2SD1205AQ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 192K |
| 代理商： | 2SD1205AQ |
Transistors
1
Publication date: December 2002
SJC00211BED
2SD1205, 2SD1205A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
Forward current transfer ratio h
FE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4000
to 20 000.
A shunt resistor is omitted from the driver.
M type package allowing easy automatic and manual insertion as well as
stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1205
VCBO
30
V
(Emitter open)
2SD1205A
60
Collector-emitter voltage 2SD1205
VCEO
25
V
(Base open)
2SD1205A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
500
mA
Peak collector current
ICP
750
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD1205
VCBO
IC = 100 A, IE = 030
V
(Emitter open)
2SD1205A
60
Collector-emitter voltage
2SD1205
VCEO
IC
= 1 mA, I
B
= 025
V
(Base open)
2SD1205A
50
Emitter-base voltage (Collector open)
VEBO
IE = 100 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 10 V, IC = 500 mA
4 000
20 000
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 500 mA, I
B
= 0.5 mA
2.5
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 0.5 mA
3
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
150
MHz
Internal Connection
B
C
E
≈ 200
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1205AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | SIP |
| 2SD1205Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP |
| 2SD1205R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 25V V(BR)CEO | 500MA I(C) | SIP |
| 2SD1206 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR M-TYPE 30V .1A .4W BCE |
| 2SD1207 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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