參數(shù)資料
型號(hào): 2SD1163
廠商: Electronic Theatre Controls, Inc.
英文描述: Power Bipolar Transistors
中文描述: 功率雙極晶體管
文件頁數(shù): 2/6頁
文件大?。?/td> 32K
代理商: 2SD1163
2SD1163, 2SD1163A
2
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Item
Symbol
2SD1163
2SD1163A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
I
C (surge)
P
C
*
1
Tj
300
350
V
Collector to emitter voltage
120
150
V
Emitter to base voltage
6
6
V
Collector current
7
7
A
Collector peak current
10
10
A
Collector surge current
20
20
A
Collector power dissipation
40
40
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C.
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SD1163
2SD1163A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
5
mA
V
CB
= 300 V, I
E
= 0
V
CB
= 350 V, I
E
= 0
I
C
= 10 mA, R
BE
=
5
mA
Collector to emitter
breakdown voltage
V
(BR)CEO
120
150
V
Emitter to base
breakdown voltage
V
(BR)EBO
6
6
V
I
E
= 10 mA, I
C
= 0
DC current transfer ratio h
FE
Collector to emitter
saturation voltage
25
25
V
CE
= 5 V, I
C
= 5 A*
1
I
C
= 5 A, I
B
= 0.5 A*
1
V
CE (sat)
2.0
1.0
V
Base to emitter
saturation voltage
V
BE (sat)
1.2
1.2
V
I
C
= 5 A, I
B
= 0.5 A*
1
Fall time
t
f
0.5
0.5
μ
s
I
CP
= 3.5 A,
I
B1
= 0.45 A
Note:
1. Pulse test.
相關(guān)PDF資料
PDF描述
2SD1164-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3
2SD1177 Silicon NPN Epitaxial(外延NPN晶體管)
2SD1209 Silicon NPN Epitaxial, Darlington
2SD1209K Silicon NPN Epitaxial, Darlington
2SD1225 2SD1225
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1163A 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD1163A(E) 制造商:Renesas Electronics Corporation 功能描述:
2SD1164 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SD1164-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,2A,TO-252 制造商:Renesas 功能描述:Darlington BJT