參數(shù)資料
型號: 2SD1138D
元件分類: 功率晶體管
英文描述: 2 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 6/9頁
文件大?。?/td> 166K
代理商: 2SD1138D
2SD1138
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
200
V
Collector to emitter voltage
V
CEO
150
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
2A
Collector peak current
I
C (peak)
5A
Collector power dissipation
P
C
1.8
W
P
C*
1
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
150
V
I
C = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
VI
E = 5 mA, IC = 0
Collector cutoff current
I
CBO
——
1
AV
CB = 120 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
320
V
CE = 4 V, IC = 50 mA
h
FE2
60
V
CE = 10 V, IC = 500 mA*
2
Collector to emitter saturation
voltage
V
CE (sat)
3.0
V
I
C = 500 mA, IB = 50 mA*
2
Base to emitter voltage
V
BE
1.0
V
CB = 4 V, IC = 50 mA
Collector output capacitance
Cob
20
pF
V
CB = 100 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1138 is grouped by h
FE1 as follows.
2. Pulse test.
BC
D
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料
PDF描述
2SD1145 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
2SD1145F 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1145E 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1145F 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1145 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
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