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參數(shù)資料
| 型號： | 2SD1137 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Power Bipolar Transistors |
| 中文描述： | 功率雙極晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | 2SD1137 |
2SD1137
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
100
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CEO
I
EBO
h
FE
—
—
100
μ
A
μ
A
V
CE
= 80 V, R
BE
=
∞
V
EB
= 3.5 V, I
C
= 0
V
CE
= 4 V
Emitter cutoff current
—
—
50
DC current transfer ratio
50
—
250
I
C
= 0.5 A*
1
I
C
= 50 mA
25
—
350
Collector to emitter saturation
voltage
Note:
1. Pulse test.
V
CE (sat)
—
—
1.0
V
I
C
= 1 A, I
B
= 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
3
10
1.0
0.3
C
C
0.1
0.03
0.01
1
30
300
100
1,000
10
3
Collector to emitter voltage V
CE
(V)
Area of Safe Operation
DC Operation
T
C
= 25
°
C
(10 V, 4 A)
(100 V, 50 mA)
(40 V, 1 A)
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PDF描述 |
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| 2SD1141K | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1137(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD1138 | 制造商:MISCELLANEOUS 功能描述: |
| 2SD1138B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD1138C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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