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參數(shù)資料
| 型號： | 2SD1113K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重擴(kuò)散 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 32K |
| 代理商： | 2SD1113K |
2SD1113(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
500
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter sustain
voltage
V
CEO(sus)
300
—
—
V
I
= 3 A, PW = 50
μ
s,
f = 50 Hz, L = 10 mH
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
—
—
100
μ
A
V
CE
= 300 V, R
BE
=
∞
V
CE
= 2 V, I
C
= 4 A*
1
I
C
= 4 A, I
B
= 40 mA*
1
DC current transfer ratio
500
—
—
Collector to emitter saturation
voltage
—
—
1.5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
2.0
V
I
C
= 4 A, I
B
= 40 mA*
1
Turn on time
t
on
t
off
—
2.0
—
μ
s
μ
s
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
Turn off time
Note:
—
23
—
1. Pulse test.
0
50
100
150
Case temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
20
40
60
0.005
0.01
0.1
1.0
50
10
Collector to emitter voltage V
CE
(V)
C
C
0.5 1.0 2
5
10 20
50 100200 500
Area of Safe Operation
i
C
(peak)
I
C
(max)
P 0m
P s
D prtn
Ta = 25
°
C
1 shot pulse
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