參數(shù)資料
型號(hào): 2SD1060S
元件分類(lèi): 功率晶體管
英文描述: 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 44K
代理商: 2SD1060S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
50V/5A Switching Applications
Ordering number:ENN686I
2SB824/2SD1060
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/D251MH/4017KI No.686–1/4
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( ) : 2SB824
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2010C
[2SB824/2SD1060]
Applications
Suitable for relay drivers, high-speed inverters,
converters, and other general large-current switch-
ing.
Features
Low collector-to-emitter saturation voltage :
VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
Tc=25C
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* : The 2SB824/2SD1060 are graded as follows by hFE at 1A :
Continued on next page.
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相關(guān)PDF資料
PDF描述
2SD1060Q 5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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