參數(shù)資料
型號(hào): 2SD1051
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency power amplification)
中文描述: 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 40K
代理商: 2SD1051
2
Transistor
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
V
CER
— R
BE
I
CBO
— Ta
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
Ta=25C
I
B
=40mA
35mA
5mA
10mA
15mA
20mA
25mA
30mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=–25C
25C
75C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0
300
250
200
150
100
50
V
CE
=5V
Ta=75C
25C
–25C
F
F
– 0.01
– 0.1
–1
–10
– 0.03
Emitter current I
E
(A)
– 0.3
–3
240
200
160
120
80
40
V
=5V
Ta=25C
T
T
1
3
10
30
100
0
120
100
80
60
40
20
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0
Base to emitter resistance R
BE
(k
)
0.01
0.1
1
10
60
50
40
30
20
10
Ta=25C
C
C
0
100
80
20
60
40
1
1000
100
10
3
30
300
V
CB
=20V
Ambient temperature Ta (C)
I
C
I
C
2SD1051
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