- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371522 > 2SD1010 (PANASONIC CORP) Silicon NPN epitaxial planer type(For low-frequency amplification) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1010 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SD1010 |
1
Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
High emitter to base voltage V
EBO
.
G
Low noise voltage NV.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
50
40
15
100
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
50
40
15
400
typ
1000
0.05
200
80
max
100
1
2000
0.2
Unit
nA
μ
A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
400 ~ 800
600 ~ 1200 1000 ~ 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1011 | Silicon NPN epitaxial planer type For low-frequency amplification |
| 2SD1022 | Darlington Transistor(5A NPN) |
| 2SD1023 | Darlington Transistor(5A NPN) |
| 2SD1024 | Darlington Transistor(8A NPN) |
| 2SD1025 | Darlington Transistor(8A NPN) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1010R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SD1010S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SD1010T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SD1011 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type For low-frequency amplification |
| 2SD1012 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA20V .7A .25W ECB |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。