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參數(shù)資料
| 型號(hào)： | 2SD0662 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For High Breakdown Voltage General Amplification |
| 中文描述： | 70 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 2SD0662 |
Transistors
2SD0662, 2SD0662B
(2SD662, 2SD662B)
Silicon NPN epitaxial planar type
1
Publication date: November 2002
SJC00195BED
For high breakdown voltage general amplification
■
Features
High collector-emitter voltage (Base open) V
CEO
High transition frequency f
T
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
P
Q
R
h
FE
30 to 100
60 to 150
100 to 220
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SD0662
V
CBO
250
V
2SD0662B
400
Collector-emitter voltage
(Base open)
2SD0662
V
CEO
200
V
2SD0662B
400
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
P
C
70
mA
Collector power dissipation
600
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
(Base open)
2SD0662
V
CEO
I
C
=
100
μ
A, I
B
=
0
200
V
2SD0662B
400
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
μ
A, I
C
=
0
V
CE
=
100 V, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
5
V
Collector-emitter cutoff current (Base open)
I
CEO
h
FE *
2
μ
A
Forward current transfer ratio
30
220
Collector-emitter saturation voltage
V
CE(sat)
1.2
V
Transition frequency
f
T
C
ob
50
MHz
Collector output capacitance
(Common base, input open circuited)
10
pF
Note) The part numbers in the parenthesis show conventional part number.
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PDF描述 |
|---|---|
| 2SD0662B | For High Breakdown Voltage General Amplification |
| 2SD0814A | For High Breakdown Voltage Low-Frequency And Low-Noise |
| 2SD0814 | 0.01UF +/-10% 80V AXI |
| 2SD814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
| 2SD814A | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0662(2SD662) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)トランジスタ － 汎用低周波増幅 |
| 2SD0662/2SD0662B(2SD662/2SD662B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD0662. 2SD0662B (2SD662. 2SD662B) - NPN Transistor |
| 2SD0662B | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For High Breakdown Voltage General Amplification |
| 2SD0662B(2SD662B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)トランジスタ － 汎用低周波増幅 |
| 2SD0662BP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 70MA I(C) | SC-71 |
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