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NPN SILICON TRANSISTOR
2SC945A
NPN SILICON TRANSISTOR
DATA SHEET
Document No. D17117EJ3V0DS00 (3rd edition)
Date Published July 2005 NS CP(K)
Printed in Japan
c
2004
DESCRIPTION
The 2SC945A is designed for use in driver stage of AF amplifier and
low speed switching.
FEATURES
High voltage
LVCEO = 50 V MIN.
Excellent hFE linearity
hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
+150
°C Maximum
Maximum Power Dissipation (TA = 25
°C)
Total Power Dissipation
250 mW
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
60 V
VCEO
Collector to Emitter Voltage
50 V
VEBO
Emitter to Base Voltage
5.0 V
IC
Collector Current
100 mA
IB
Base Current
20 mA
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE1
VCE = 6.0 V, IC = 0.1 mA
50
185
DC Current Gain
hFE2
VCE = 6.0 V, IC = 1.0 mA
90
200
600
Gain Bandwidth Product
fT
VCE = 6.0 V, IE =
10 mA
250
MHz
Collector to Base Capacitance
Cob
VCB = 6.0 V, IE = 0, f = 1.0 MHz
3.0
pF
Collector Cutoff Current
ICBO
VCB = 60 V, IE = 0 A
100
nA
Emitter Cutoff Current
IEBO
VEB = 5.0 V, IC = 0 A
100
nA
Base to Emitter Voltage
VBE
VCE = 6.0 V, IC = 1.0 mA
0.55
0.62
0.65
V
Collector Saturation Voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.15
0.3
V
Base Saturation Voltage
VBE(sat)
IC = 100 mA, IB = 10 mA
0.86
1.0
V
CLASSIFICATION OF hFE2
Rank
R
Q
P
K
Range
90 to 180
135 to 270
200 to 400
300 to 600
Remark hFE2 Test Conditions: VCE = 6.0 V, IC = 1.0 mA
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1. Emitter
2. Collector
3. Base
EIAJ:
SC43B
JEDEC:
TO92
IEC:
PA33